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160 Ohm, N- Channel Power MOSFETs These are N- Channel enhancement mode silicon gate power ﬁeld effect transistors. IRF520NS/ L HEXFET® Power MOSFET PD - 91340A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. - 10A TO- 220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS( on) ID IRF520 100 V 0. Find IRF 520 Transistors related suppliers manufacturers, products specifications on GlobalSpec - a trusted source of IRF irf 520 Transistors information. 10 A TYPICAL RDS( on) = 0. IRF520 datasheet datasheet, alldatasheet, IRF520 pdf, Datasheet search site for Electronic Components , IRF520 circuit : VISHAY - Power MOSFET, IRF520 datasheets . 2A 80V , 100V 0. 2A collector current and 100V breakdown voltage.
Irf 520 datasheet. Cross Reference Search. Irf 520 datasheet. 115 Ω - 10a to- 220 low gate charge stripfet™ ii power mosfet typical r ds( on) = 0. 270 Ohm , tested, N- Channel Power MOSFET This N- Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. IRF520 N- CHANNEL 100V - 0.
IRF5 Power N Mosfet Transistor TO- 220 2 pcs with Heatsink compounds. Only 1 left in stock - order soon. Data Sheet January. © Fairchild Semiconductor Corporation IRF510 Rev.
irf 520 datasheet
B Test Circuits and Waveforms FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16.